Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-27
1999-09-14
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438645, 438687, 257762, 257767, H01L 23532, H01L 21283, H01L 21302, H01L 213205
Patent
active
059536284
ABSTRACT:
On a semiconductor substrate, an SiO.sub.2 layer as an insulating layer and an intermediate insulating layer are stacked successively. The intermediate insulating layer selectively has an opening portion and a copper wiring is formedwithin the opening portion. The copper wiring is covered with an anti-oxidation layer. The anti-oxidation layer is formed of copper sulfide so that it becomes unnecessary to form another anti-oxidation layer which does not contain copper, the treatment in the vacuum can be simplified or thermal treatment step at high temperatures can be omitted.
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Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Souw Bernard E.
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