Method for forming wires of semiconductor device

Details Method for forming wires of semiconductor device Method for forming wires of semiconductor device

1997-09-11

2000-06-20

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438652, 438600, 437187, 437195, H01L 2144

Patent

active

06077777&

ABSTRACT:
A method of forming wires of a semiconductor device is disclosed for improving the performance of the semiconductor device. The method includes the steps of successively forming a barrier layer, a wire layer and an antireflective coating layer on a semiconductor substrate, patterning the barrier layer, the wire layer and the ARC layer, and removing remainders produced during the patterning step by using a plasma including a mixture of oxygen (O.sub.2) and a gas having fluorine, whereby over-etching of the wire layer and the semiconductor layer is prevented.

REFERENCES:
patent: 5229325 (1993-07-01), Park et al.
patent: 5466640 (1995-11-01), Choi
Usujima et al, "Generation Mechanism of Photoresist Residue after Ashing," J. Electrochem. Soc., vol. 141, No. 9 (Sep. 1994) pp. 2487-2493.

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