Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-01-03
1997-06-10
Dang, Trung
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438228, 438451, H01L 2170
Patent
active
056375247
ABSTRACT:
A method for forming wells of a semiconductor device, being capable of removing the topology between n- and p-well regions. The method of the present invention provides a twin well structure wherein the n-well region has a higher level than the p-well region. This method includes the steps of sequentially forming a buffering film and an oxidizable film over a semiconductor substrate, forming an anti-oxidation film over the oxidizable film, removing a portion of the anti-oxidation film disposed at a first well region of the semiconductor substrate, implanting impurity ions in the first well region of the semiconductor substrate and annealing the resulting structure, thereby forming a first well in the substrate, removing the anti-oxide film and the oxidizable film both disposed at a second well region of the substrate, and implanting impurity ions in the second well region of the semiconductor substrate and annealing the resulting structure, thereby forming a second well in the substrate.
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patent: 5362670 (1994-11-01), Iguchi et al.
Kim Jong K.
Lee Chang J.
Dang Trung
LG Semicon Co. Ltd.
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