Method for forming wells of a semiconductor device

Details Method for forming wells of a semiconductor device Method for forming wells of a semiconductor device

1996-12-20

1999-04-27

Chang, Joni

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438527, H01L 21425

Patent

active

058980075

ABSTRACT:
A method for forming wells of a semiconductor device which involves the formation of an additional ion implanted layer and a double rapid thermal annealing for a short period of time, thereby completely removing defects while maintaining a constant resistance in the silicon layer of the semiconductor device. The method includes the steps of providing a semiconductor substrate, sequentially implanting impurity ions in the semiconductor substrate four times, thereby sequentially forming an ion implanted layer adapted to form a well, an additional ion implanted layer, a channel stop ion implanted layer and an ion implanted layer adapted to control a threshold voltage in the semiconductor substrate, and conducting a rapid thermal annealing for the resulting structure for a short period of time in two steps.

REFERENCES:
patent: 4992841 (1991-02-01), Halvis
patent: 5235197 (1993-08-01), Chamberlain et al.
patent: 5573963 (1996-11-01), Sung
patent: 5661046 (1997-08-01), Ilderem et al.
patent: 5741731 (1998-04-01), Yuuki

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