Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Patent
1998-09-24
2000-08-15
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
438507, 438962, 438149, 438 22, 257 9, 257213, H01L 2100, H01L 2131, H01L 21469, H01L 2184
Patent
active
061036005
ABSTRACT:
A quantum dot and quantum fine wire forming method is provided which can allow control of the position for crystalline particle growth and enables formation of particles with high uniformity in size and density and with high reproducibility. After an Si substrate is formed with a step by a dry etching method, an SiO.sub.2 film is formed on the surface of the substrate. The interior of a reaction chamber is evacuated to a vacuum of 10.sup.-8 Torr, and then an Si.sub.2 H.sub.6 gas is introduced into the reaction chamber to flow therein so that Si crystal particles (quantum dots) are formed along the step. The step is formed by conventional photolithography and dry etching; therefore, the position for quantum dot growth can be easily controlled. By controlling the rate and time period of gas flow and the temperature of the substrate it is possible to form quantum fine wires, and to control the size of quantum dots and/or thickness of quantum fine wires. In this way, high uniformity in quantum dot and/or quantum fine wire size/thickness and density can be realized with high reproducibility. Further, low cost production, high yield, and high productivity can be achieved without use of any special fine processing technique.
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Fukushima Yasumori
Nakamura Kenta
Ueda Tohru
Bowers Charles
Christianson K.
Sharp Kabushiki Kaisha
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