Method for forming ultra thin low leakage multi gate devices

Details Method for forming ultra thin low leakage multi gate devices Method for forming ultra thin low leakage multi gate devices

2006-03-20

2008-12-02

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S769000, C438S775000, C438S474000, C257SE21170, C257SE21257, C257SE21269, C257SE21274, C257SE21311, C257SE21227

Reexamination Certificate

active

07459390

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device having multiple gate dielectric thickness layers. The method, in one embodiment, includes forming a first layer of gate dielectric material over a semiconductor substrate in a first active region and a second active region of a semiconductor device, and patterning a masking layer to expose the first layer of gate dielectric material located in the first active region. The method further includes subjecting exposed portions of the first layer of gate dielectric material to a nitrogen containing plasma, thereby forming a second layer of gate dielectric material over the first layer of gate dielectric material located in the first active region, incorporating oxygen into the second layer of gate dielectric material located in the first active region, and removing the, patterned masking layer, thereby resulting in a first greater thickness gate dielectric in the first active region and a second lesser thickness gate dielectric in the second active region.

REFERENCES:
patent: 5989962 (1999-11-01), Holloway et al.
patent: 6110842 (2000-08-01), Okuno
patent: 6297103 (2001-10-01), Ahn et al.
patent: 6335262 (2002-01-01), Crowder et al.
patent: 6586339 (2003-07-01), Plat et al.
patent: 6730566 (2004-05-01), Niimi et al.
patent: 6756635 (2004-06-01), Yasuda et al.
patent: 7183596 (2007-02-01), Wu et al.
patent: 2005/0106894 (2005-05-01), Akoi et al.
patent: 2006/0043369 (2006-03-01), Varghese
patent: 2006/0046407 (2006-03-01), Juengling
patent: 2007/0218636 (2007-09-01), Niimi et al.
patent: 2007/0243683 (2007-10-01), Niimi et al.

Affiliated with

Also associated with

Rating

Method for forming ultra thin low leakage multi gate devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming ultra thin low leakage multi gate devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming ultra thin low leakage multi gate devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4038782