Method for forming tungsten structures in a semiconductor

Details Method for forming tungsten structures in a semiconductor Method for forming tungsten structures in a semiconductor

1989-01-04

1990-05-15

Schor, Kenneth M.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156652, 156656, 156664, H01L 21302

Patent

active

049255240

ABSTRACT:
A method and system for forming tungsten structures in a semiconductor device which uses a chromium protective layer to protect underlying semiconductor layers during the etching process and a chromium mask layer so that tungsten structures can be formed with high aspect ratios using a reactive ion etching to etch the tungsten with a carbon tetrafluoride oxygen plasma in a reactive ion etcher. Long overetches can be achieved because of the high selectivity of chromium to the carbon tetrafluoride/oxygen plasma. The anisotropic nature of the reactive ion etcher prevents undercut during long overetches of the tungsten to further decrease losses in linewidth or increases in resistance as a result of overetching.

REFERENCES:
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patent: 4229247 (1980-10-01), Chiu et al.
patent: 4617730 (1986-10-01), Geldermans et al.
patent: 4637129 (1987-01-01), Derkits, Jr. et al.
patent: 4695872 (1987-09-01), Chatterjee
H. Abraham et al., "NMOS-111 Photolithography", Hewlett-Packard Journal, Aug. 1983, pp. 34-37.
Fischl et al., "Plasma Enhanced Etching of Tungsten and Tungsten Silicide in Chlorine-Containing Discharges", Solid State Science and Technology, pp. 2265-69, Sep. 1987.

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