Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-03-04
2008-03-04
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S681000, C438S775000, C438S785000, C257SE21168, C257SE21170
Reexamination Certificate
active
07338900
ABSTRACT:
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a reducing gas, a second material gas supply step of supplying a second material gas composed of a tungsten compound gas, and a nitridation step of supplying a nitriding gas. Since a step of depositing tungsten on a substrate5, and a step of forming tungsten nitride are performed separately, by varying the flow rate of each gas, the pressure when each gas is supplied, and the supply time, or the number of times each step is performed and the order in which the steps are performed, the quantity of tungsten deposited and the quantity of tungsten nitride formed can be controlled easily.
REFERENCES:
patent: 6200893 (2001-03-01), Sneh
patent: 6872429 (2005-03-01), Chen et al.
patent: 2002/0187631 (2002-12-01), Kim et al.
patent: 2004/0142557 (2004-07-01), Levy et al.
patent: 6-89873 (1994-03-01), None
patent: 7-94425 (1995-04-01), None
patent: 7-252660 (1995-10-01), None
patent: 11-54459 (1999-02-01), None
patent: 2000-212749 (2000-08-01), None
patent: 2001-23930 (2001-01-01), None
patent: 2001-319930 (2001-11-01), None
patent: WO 00/54320 (2000-09-01), None
patent: WO 01/99166 (2001-12-01), None
patent: WO 02/48427 (2002-06-01), None
patent: WO 2004/061154 (2004-07-01), None
J. K. Klaus et al, Atomically controlled growth to tungsten and tungsten nitride using sequential surface reactions, Applied Surface Science, 2000, vol. 162-163, p. 479-791.
International Search Report dated Mar. 30, 2004.
Gonohe Narishi
Harada Masamichi
Kato Nobuyuki
Mizuno Eiichi
Ghyka Alexander
Kratz Quintos & Hanson, LLP
Ulvac Inc.
LandOfFree
Method for forming tungsten nitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming tungsten nitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming tungsten nitride film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2796772