Method for forming tri-gate FinFET with mesa isolation

Details Method for forming tri-gate FinFET with mesa isolation Method for forming tri-gate FinFET with mesa isolation

2005-02-15

2005-02-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000

Reexamination Certificate

active

06855583

ABSTRACT:
A method forming a tri-gate fin field effect transistor includes forming an oxide layer over a silicon-on-insulator wafer comprising a silicon layer, and etching the silicon and oxide layers using a rectangular mask to form a mesa. The method further includes etching a portion of the mesa using a second mask to form a fin, forming a gate dielectric layer over the fin, and forming a tri-gate over the fin and the gate dielectric layer.

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