Method for forming trenched polysilicon structure

Details Method for forming trenched polysilicon structure Method for forming trenched polysilicon structure

1997-09-09

1999-11-23

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438398, 438947, 438964, H01L 218242

Patent

active

059899719

ABSTRACT:
A method for forming a trenched polysilicon structure can be applied to a semiconductor device. The method includes steps of: a) providing a polysilicon layer; b) forming a dielectric layer on the polysilicon layer; c) forming a rugged oxide layer on the dielectric layer; d) removing a portion of the dielectric layer which is not covered by the rugged oxide layer for exposing a corresponding portion of the polysilicon layer; e) forming a plurality of microtrenches by etching the corresponding portion of the polysilicon layer; and f) removing the rugged oxide layer and the dielectric layer to obtain the trenched polysilicon structure.

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patent: 5466627 (1995-11-01), Lur et al.
patent: 5488008 (1996-01-01), Kawamura
patent: 5538592 (1996-07-01), Chen et al.
patent: 5670406 (1997-09-01), Tseng
patent: 5681774 (1997-10-01), Tseng
patent: 5804480 (1998-09-01), Lu et al.

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