Method for forming trench gate dielectric layer

Details Method for forming trench gate dielectric layer Method for forming trench gate dielectric layer

2007-04-17

2007-04-17

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S330000, C257S332000, C257SE21192, C257SE21193, C438S762000, C438S763000

Reexamination Certificate

active

11161177

ABSTRACT:
A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a sacrificial layer on the surface of the trench. Then, the sacrificial layer is removed. Next, a low-pressure chemical vapor deposition is performed to form a gate dielectric layer on the surface of the trench.

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