Method for forming TiW fuses in high performance BiCMOS process

Details Method for forming TiW fuses in high performance BiCMOS process Method for forming TiW fuses in high performance BiCMOS process

1994-04-28

1995-10-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437192, 437195, 437922, 148DIG55, H01L 2362

Patent

active

054570590

ABSTRACT:
A method for providing programmable devices in which an insulation layer, such as an oxide (20), TEOS, or the like, is formed during a BiCMOS integrated circuit fabrication process includes forming a first conductor fuse layer (22), for example of TiW or the like, on the insulation layer (20). The fuse layer (22) may then be patterned, and a second insulation layer (23) formed over it. Alternatively, the fuse layer (53) may be left unpatterned and one or more conductor layers (35,36) may be formed over the fuse layer (53). The conductor layer (35,36) is patterned, and the fuse layer (53) thereafter patterned using the conductor layer (35,36) as an etch mask. In either case, contact holes (26) are formed in the insulation layer (20) to regions (14,15) to which contact is desired under the insulation layer (20). Contact conductors (28), such as of tungsten or the like, are formed in the contact holes (26) to contact the fuse (34), contact layers ( 22), or regions (14,15) under the insulation layer (20), as needed.

REFERENCES:
patent: 4209894 (1980-07-01), Keen
patent: 4420504 (1983-12-01), Cooper et al.
patent: 4792835 (1988-12-01), Sacarisen et al.
patent: 4882293 (1989-11-01), Naumann et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 5017510 (1991-05-01), Welch et al.
patent: 5065208 (1991-11-01), Shah et al.

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