Method for forming titanium tungsten local interconnect for inte

Details Method for forming titanium tungsten local interconnect for inte Method for forming titanium tungsten local interconnect for inte

1992-09-25

1994-12-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437228, H01L 2144

Patent

active

053765850

ABSTRACT:
A method and structure for a titanium tungsten (TiW)/tungsten local interconnect (136) for cells (100) of semiconductor device includes steps and structure resulting from sputtering a titanium tungsten (TiW) layer (128) on semiconductor structure (100) and then forming a tungsten layer over the TiW layer (128). Then, the method is to pattern a layer of resistive polymer (32) such as photoresist in a predetermined lithographic pattern over the structure (100). This forms the local interconnect (136) from the TiW layer (128). Then, by dry etching, the process removes exposed portions of the tungsten and TiW layers. A wet strip process removes resistive polymer (32) from the semiconductor structure (100) to yield TiW/tungsten interconnect (136) for the semiconductor structure (100). Alternatively a single TiW layer is used in which exposed portions of the TiW layer are removed by a wet etch.

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Rob Wolters, "The Feasiblity of CoSi.sub.2, TiW and TiW(N) As Local Interconnection in a Self-Aligned CoSi2 Technology" Jun. 13-14, 1988, V-MIC Conf. 1988 IEEE.

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