Method for forming Ti film and TiN film, contact structure,...

Details Method for forming Ti film and TiN film, contact structure,... Method for forming Ti film and TiN film, contact structure,...

2005-04-08

2010-06-15

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By vapor phase surface reaction

C438S905000, C438S906000, C438S974000, C438S471000

Reexamination Certificate

active

07737005

ABSTRACT:
A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.

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