Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2010-02-09
2010-12-14
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S072000, C257SE21411, C349S043000
Reexamination Certificate
active
07851282
ABSTRACT:
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
REFERENCES:
patent: 635521 (1899-10-01), Stokes
patent: 5563427 (1996-10-01), Yudasaka et al.
patent: 6166397 (2000-12-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6306693 (2001-10-01), Ishiguro et al.
patent: 6399960 (2002-06-01), Yamazaki et al.
patent: 6573575 (2003-06-01), Yamazaki
patent: 6613620 (2003-09-01), Fujimoto et al.
patent: 6635521 (2003-10-01), Zhang et al.
patent: 6674136 (2004-01-01), Ohtani
patent: 7037765 (2006-05-01), Yamazaki et al.
patent: 2004/0185607 (2004-09-01), Shih et al.
patent: 2004/0191972 (2004-09-01), Hotta
patent: 2004/0219723 (2004-11-01), Peng
patent: 2004/0253771 (2004-12-01), Yamazaki et al.
patent: 2000077665 (2000-03-01), None
patent: 2000315798 (2000-11-01), None
TW Office Action mailed Jul. 4, 2005.
TW Office Action mailed Oct. 4, 2005.
CN Office Action mailed Dec. 1, 2006.
English abstract of JP2000-315798, pub. Nov. 14, 2000.
Chen Yun-Sheng
Huang Wei-Pang
Li Chun-Huai
AU Optronics Corp.
Fulk Steven J
Thomas Kayden Horstemeyer & Risley
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