Method for forming thin film and base and having thin film...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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Details

C427S569000, C427S457000, C427S248100

Reexamination Certificate

active

07740917

ABSTRACT:
A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

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patent: 6200893 (2001-03-01), Sneh
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patent: 2003/0082412 (2003-05-01), Fukuda
patent: 2003/0111962 (2003-06-01), Shannon
patent: 2003/0113479 (2003-06-01), Fukuda et al.
patent: 2003/0232136 (2003-12-01), Fukuda et al.
patent: A 2000-303175 (2000-10-01), None
patent: 1055747 (2000-11-01), None
patent: A 2002-110397 (2002-04-01), None

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