Method for forming Ta-Ru liner layer for Cu wiring

Details Method for forming Ta-Ru liner layer for Cu wiring Method for forming Ta-Ru liner layer for Cu wiring

2007-12-12

2010-02-02

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C257SE21160, C257SE21171

Reexamination Certificate

active

07655564

ABSTRACT:
A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate.

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