Method for forming T-shaped conductor wires of semiconductor...

Details Method for forming T-shaped conductor wires of semiconductor... Method for forming T-shaped conductor wires of semiconductor...

2005-09-06

2005-09-06

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S640000

Reexamination Certificate

active

06939798

ABSTRACT:
A method is provided for forming a conductive wire of a semiconductor device using, for example, a damascene process. A conductive wire, such as a metal wire, is formed, based on a notching phenomenon which occurs when the etching selectivity between a polycrystalline silicon layer and a lower film is approximately 5 to 500:1.

REFERENCES:
patent: 6528363 (2003-03-01), Ku et al.
patent: 1992-0013606 (1992-07-01), None
Notice of Preliminary Rejection from the Korean Intellectual Property Office dated Jun. 30, 2003, with English translation.

Affiliated with

Also associated with

Rating

Method for forming T-shaped conductor wires of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming T-shaped conductor wires of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming T-shaped conductor wires of semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3368918