Method for forming strained silicon nitride films and a...

Details Method for forming strained silicon nitride films and a... Method for forming strained silicon nitride films and a...

2011-05-10

2011-05-10

Hoang, Quoc D (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C427S569000

Reexamination Certificate

active

07939455

ABSTRACT:
A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured to react with the silicon precursor with a first reactivity characteristic. The substrate is also exposed to a gas including a second nitrogen precursor configured to react with the silicon precursor with a second reactivity characteristic different than the first reactivity characteristic such that a property of the SiN film formed on the substrate changes to provide a strained SiN film. According to another embodiment, the substrate is exposed to a gas pulse containing a silicon precursor and first and second nitrogen precursors, wherein the ratio of the first and second precursors is varied during the exposure.

REFERENCES:
patent: 2003/0215570 (2003-11-01), Seutter et al.
patent: 2004/0241920 (2004-12-01), Hsiao et al.
patent: 2005/0287775 (2005-12-01), Hasebe et al.
patent: 2006/0269692 (2006-11-01), Balseanu et al.
patent: 2007/0065578 (2007-03-01), McDougall

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