Method for forming storage node contact plug in...

Details Method for forming storage node contact plug in... Method for forming storage node contact plug in...

2006-05-05

2008-09-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S637000, C438S638000

Reexamination Certificate

active

07427564

ABSTRACT:
A method for forming a storage node contact plug in a semiconductor device is provided. The method includes: forming an inter-layer insulation layer over a substrate having a conductive plug; etching a portion of the inter-layer insulation layer using at least line type storage node contact masks as an etch mask to form a first contact hole with sloping sidewalls; etching another portion of the inter-layer insulation layer underneath the first contact hole to form a second contact hole exposing the conductive plug, the second contact hole having substantially vertical sidewalls; and filling the first and second storage node contact holes to form a storage node contact plug.

REFERENCES:
patent: 6368959 (2002-04-01), Nakamura
patent: 6682984 (2004-01-01), Wu et al.
patent: 2002/0196653 (2002-12-01), Kim et al.
patent: 2004/0072104 (2004-04-01), Choi et al.
patent: 1162845 (1994-10-01), None
patent: 2002-141412 (2002-05-01), None
patent: 1997-0003978 (1997-01-01), None

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