Method for forming stacked polysilicon

Details Method for forming stacked polysilicon Method for forming stacked polysilicon

1997-07-30

1999-04-20

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438646, 438672, 438675, H01L 214763

Patent

active

058952640

ABSTRACT:
An improved and new method for forming stacked polysilicon contacts for use in multilevel conducting interconnection wiring in semiconductor integrated circuits has been developed. The polysilicon contacts are self-aligned between wiring levels and the fabrication process results in a substantially planar top insulating layer surface.

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