Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2004-09-02
2010-02-09
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S482000, C438S487000, C438S799000, C257SE21094, C257SE29296
Reexamination Certificate
active
07659185
ABSTRACT:
Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
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PCT/KR2004/002213 International Search Report Jan. 2004.
Choi Jong-Hyun
Chon Jun-Hyuk
Jang Jin
Kim Seung-Soo
Oh Jae-Hwan
Booker Vicki B
Daly, Crowley & Mofford & Durkee, LLP
Kyunghee University Industrial & Academic Collaboration Fou
Landau Matthew C
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