Method for forming silicon nitride film

Details Method for forming silicon nitride film Method for forming silicon nitride film

1988-12-21

1990-08-14

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

437241, C23C 1434

Patent

active

049484826

ABSTRACT:
Silicon nitride films are formed by controlling the internal stress more precisely than conventional methods without varying its optical properties, mechanical strength, composition and density. The film is formed by sputtering, using an inert gas or a mixture of an inert gas and nitrogen, onto a substrate while keeping the substrate temperature within a given temperature range according to the pressure of the sputtering gas or gas mixture, the two being interrelated, thus carefully and precisely controlling the internal stress of the film formed.

REFERENCES:
S. M. Hu et al., J. Electrochem. Soc., vol. 114, pp. 826-833 (1967).

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