Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1993-08-30
1998-08-11
Fourson, George R.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438285, 438412, 438407, H01L 21334
Patent
active
057926794
ABSTRACT:
A method for fabricating a GeSi/Si/SiO.sub.2 heterostructure comprises the steps of: (a) providing a monocrystalline Si substrate; (b) defining a GeSi region within the Si substrate while leaving a Si cap overlying the GeSi region, the Si cap being an integral part of the monocrystalline substrate; and (c) oxidizing part of the Si cap to thereby produce the GeSi/Si/SiO.sub.2 heterostructure.
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Fourson George R.
Sharp Kabushiki Kaisha
Sharp Microelectronics Technology Inc.
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