Method for forming silicon carbide film containing oxygen

Details Method for forming silicon carbide film containing oxygen Method for forming silicon carbide film containing oxygen

2006-08-08

2011-12-20

Meeks, Timothy (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

C427S569000, C427S249100, C427S255180, C427S255230

Reexamination Certificate

active

08080282

ABSTRACT:
A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

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