Method for forming silicide in semiconductor device

Details Method for forming silicide in semiconductor device Method for forming silicide in semiconductor device

2011-01-11

2011-01-11

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S683000, C438S755000, C257SE21165

Reexamination Certificate

active

07867901

ABSTRACT:
A method for forming silicide in a semiconductor device includes simultaneously performing a cleaning process and an etching process to remove a silicide metal layer if an excessive delay in time lapses after forming the silicide metal layer. This may prevent the occurrence of liquid marks due to an oxidation reaction at an interface of the semiconductor substrate in contact with the silicide metal layer, thereby preventing silicide defects due to the excessive delay.

REFERENCES:
patent: 2007/0170501 (2007-07-01), Lee et al.
patent: 2007/0254480 (2007-11-01), Matsuda et al.
patent: 2009/0004853 (2009-01-01), Bu et al.

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