Method for forming silicide film in semiconductor device

Details Method for forming silicide film in semiconductor device Method for forming silicide film in semiconductor device

2007-01-23

2007-01-23

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S592000, C438S597000

Reexamination Certificate

active

11027141

ABSTRACT:
Method for forming a silicide film in a semiconductor device, including the steps of forming a silicide suppressing film on a silicon substrate, patterning the silicide suppressing film by chemical dry etching, forming a metal film on an entire surface of the silicon substrate inclusive of the silicide suppressing film pattern, performing a heat treatment to form a silicide film on a portion of the silicon substrate opened from the silicide suppressing film pattern, and removing a portion of the metal film not turned into the silicide, thereby forming the silicide suppressing film pattern accurately and minimizing etch damage caused by plasma, to improve process yield of the semiconductor device, substantially.

REFERENCES:
patent: 6015748 (2000-01-01), Kim et al.
patent: 6162675 (2000-12-01), Hwang et al.
patent: 6171942 (2001-01-01), Lee et al.
patent: 6828634 (2004-12-01), Oshima
patent: 6897159 (2005-05-01), Lee et al.

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