Method for forming silicide film in semiconductor device

Details Method for forming silicide film in semiconductor device Method for forming silicide film in semiconductor device

1997-10-17

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438683, 438649, 438650, 438651, 438655, 427 99, 4271261, 427255, 4272551, 4272552, 148 19, 148147, H01L 2144

Patent

active

059813873

ABSTRACT:
Disclosed is a method for forming a silicide film on bit lines or word lines in a semiconductor device. The method includes the steps of: placing a substrate within a reacting chamber, the substrate having an objective layer on which a metal silicide film is to be formed; and supplying a first source gas for silicon component of the metal silicide and a second source gas for metal component of the metal silicide into the reacting chamber with maintaining a flow rate of the first source gas and with varying a flow rate of the second source gas, wherein the first and second source gases are discretely supplied into the reacting chamber, a reacting zone of the reacting chamber being maintained at a constant temperature range for a selected time.

REFERENCES:
patent: 5203956 (1993-04-01), Hansen
patent: 5726096 (1998-03-01), Jung
patent: 5856237 (1999-01-01), Ku

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