Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1995-05-16
1998-06-02
Trinh, Michael
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
438105, 438931, 148DIG148, H01L 2120
Patent
active
057599084
ABSTRACT:
A method is disclosed for forming crystalline silicon carbide (SiC) semiconductors on a semiconductor-on-insulator (SOI) structure. In this method, the thin silicon layer of an SOI substrate is converted to silicon carbide using a carbonization reaction. The SiC layer is then, optionally, further increased in thickness using a vapor deposition reaction, preferably using a silicon-containing cyclobutane gas. Rather than increasing the thickness of the SiC layer, the vapor deposition process can also be used to deposit a layer of another semiconductor (e.g., a III-N or III-P semiconductor) on the thin SiC layer. The products made by this process are also claimed.
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Steckl Andrew J.
Yuan Chong
Trinh Michael
University of Cincinnati
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