Semiconductor device manufacturing: process – Making field effect device having pair of active regions...
Reexamination Certificate
2011-05-03
2011-05-03
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
C438S149000, C438S153000, C438S154000, C438S259000, C438S164000, C257SE21370, C257SE21384, C257SE21400
Reexamination Certificate
active
07935577
ABSTRACT:
A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. Dielectric spacers are formed along the upper trench sidewalls. After forming the dielectric spacers, an inter-electrode dielectric (IED) is formed in the trench over the shield electrode. After forming the IED, the dielectric spacers are removed.
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Grebs Thomas E.
Kraft Nathan Lawrence
Ridley Rodney
Ahmadi Mohsen
Fairchild Semiconductor Corporation
Garber Charles D
Kilpatrick Townsend & Stockton LLP
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