Method for forming shallow trench isolation of semiconductor...

Details Method for forming shallow trench isolation of semiconductor... Method for forming shallow trench isolation of semiconductor...

2007-11-26

2009-11-10

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

C438S719000, C438S732000, C257SE21545, C257SE21628

Reexamination Certificate

active

07615461

ABSTRACT:
A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure.

REFERENCES:
patent: 7118987 (2006-10-01), Fu et al.
patent: 2002/0132486 (2002-09-01), Williams et al.

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