Method for forming shallow trench isolation

Details Method for forming shallow trench isolation Method for forming shallow trench isolation

1997-09-12

1999-06-22

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438410, 438437, 148DIG50, H01L 2176

Patent

active

059151927

ABSTRACT:
A method of forming a trench isolation is disclosed. The initial step includes forming a first dielectric layer on a substrate of a transistor followed by a second dielectric layer formed on the first dielectric layer. Next, the substrate, the first dielectric layer and the second dielectric layer is patterned and etched to form a trench in the substrate, the first dielectric layer and the second dielectric layer. Next, a third dielectric layer is formed on the surface of the side wall of the trench followed by isotropically etching the bottom of the trench. Finally, a fourth dielectric layer on the surface of the trench is formed and the trench is filled with a dielectric material.

REFERENCES:
patent: 4604162 (1986-08-01), Sobczak
patent: 4615746 (1986-10-01), Kawakita et al.
patent: 4685198 (1987-08-01), Kawakita et al.

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