Method for forming shallow junction of a semiconductor device

Details Method for forming shallow junction of a semiconductor device Method for forming shallow junction of a semiconductor device

1997-06-09

1999-02-16

Bowers, Charles

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438224, 438228, 438231, H01L 21425

Patent

active

058720472

ABSTRACT:
A method for forming a shallow junction of a semiconductor device, characterized by a rapid thermal process executed to considerably decrease the density of the point defects which may be caused by ion implantation. With it, a junction which is much shallower, with lower sheet resistance and less junction leakage current can be obtained even under conventional ion implantation and tube treatment conditions. This contributes to an improvement in the production yield of a semiconductor device. By virtue of the elimination of the point defects, the limits in selecting the tube thermal treatment temperature and time for planarizing the subsequent interlayer insulating film can be relieved, so that process allowance can be secured, thereby improving the reliability of the semiconductor device and allowing the high integration of the semiconductor device.

REFERENCES:
patent: 5273914 (1993-12-01), Miyajima et al.
patent: 5366922 (1994-11-01), Aoki et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5407847 (1995-04-01), Hayden et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5563093 (1996-10-01), Koda et al.

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