Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2005-09-02
2008-12-09
Loke, Steven (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S151000, C257S410000, C257S412000
Reexamination Certificate
active
07462554
ABSTRACT:
A method for forming a semiconductor device provides for forming a gate region on top of a substrate. Gate sidewall liners are formed on opposed sides of the gate region, the sidewall liners having a vertical part contacting sidewalls of the gate region and a horizontal part contacting the substrate. Recessed spacers are formed on top of the sidewall liners. The sidewall liner underneath the spacers is pulled back from the edge of the respective spacer by a predetermined distance. The recessed spacers are formed by reducing the height of the originally formed spacer. The height of the spacers is lower than a height of the gate sidewall liner and the width of the horizontal part of the sidewall liner is shorter than the width of the spacer. The reduced spacer height reduces device channel stress.
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Chung Tone-Xuan
Huang Ch'eng-Ch'uan
Huang Chien-Chao
Yang Fu-Liang
Goodwin David
Loke Steven
Taiwan Semiconductor Manufacturing Co. Ltd
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