Method for forming self-aligned silicide layers on sub-quarter m

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438664, 438666, 438674, 438683, H01L 2144

Patent

active

061001910

ABSTRACT:
The present invention discloses a method to manufacture a self-aligned silicide layer on a substrate. A metal oxide semiconductor (MOS) device and a shallow trench are fabricated in the substrate. The device has a gate structure, spacers of the gate structured and doping regions. The shallow trench is refilled with silicon oxide material for isolation. A silicon layer is nonconformally deposited on the top surface of the gate structure, the spacers and the doping regions by using a physical vapor deposition (PVD) process, such as ion metal plasma (IMP) process. The IMP process, like a sputtering process, is to ionize a silicon material or a refractory-metal material to silicon ions or metal ions and the ions are biased to anisotropically deposit on the top surface of the substrate. A refractory metal layer is defined on the top surface of the silicon layer by the IMP technology. A two-step thermal annealing process, such as rapid thermal annealing (RTA) process is performed to convert the silicon layer and the refractory metal layer into a silicide layer. Since the silicon layer serves as a silicon source for the salicide process, the silicide layer can form on the spacers and the silicon oxide material of the trench.

REFERENCES:
patent: 4873204 (1989-10-01), Wong et all
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 5494860 (1996-02-01), McDevitt et al.
patent: 5668065 (1997-09-01), Lin
patent: 5691212 (1997-11-01), Tsai et al.
patent: 5756391 (1998-05-01), Tsuchiaki
patent: 5759899 (1998-06-01), Saito
patent: 5966607 (1999-10-01), Chee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for forming self-aligned silicide layers on sub-quarter m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming self-aligned silicide layers on sub-quarter m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming self-aligned silicide layers on sub-quarter m will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1149937

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.