Method for forming self-aligned metal silicide contacts

Details Method for forming self-aligned metal silicide contacts Method for forming self-aligned metal silicide contacts

2009-08-12

2011-10-18

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S636000, C438S657000, C438S762000, C438S770000, C257SE21438, C257SE21476, C257SE29156

Reexamination Certificate

active

08039382

ABSTRACT:
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.

REFERENCES:
patent: 2937940 (1960-05-01), Weisberg et al.
patent: 3163524 (1964-12-01), Weisberg et al.
patent: 3245780 (1966-04-01), Butler et al.
patent: 3365401 (1968-01-01), Saubestre et al.
patent: 4345969 (1982-08-01), James et al.
patent: 4561907 (1985-12-01), Raicu
patent: 6271131 (2001-08-01), Uhlenbrock et al.
patent: 6531396 (2003-03-01), Chi et al.
patent: 6787864 (2004-09-01), Paton et al.
patent: 7015126 (2006-03-01), Wu et al.
patent: 7335606 (2008-02-01), Chi et al.
patent: 7544610 (2009-06-01), Cabral et al.
patent: 7618891 (2009-11-01), Fang et al.
patent: 2002/0190028 (2002-12-01), Srivastava et al.
patent: 2004/0203229 (2004-10-01), Fang et al.
patent: 2005/0156210 (2005-07-01), Currie et al.
patent: 2005/0253204 (2005-11-01), Chan et al.
patent: 2006/0051961 (2006-03-01), Cabral et al.
patent: 2007/0254479 (2007-11-01), Fang et al.
patent: 2008/0274611 (2008-11-01), Cabral et al.
patent: 2009/0004850 (2009-01-01), Ganguli et al.

Affiliated with

Also associated with

Rating

Method for forming self-aligned metal silicide contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming self-aligned metal silicide contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming self-aligned metal silicide contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4274531