Method for forming self-aligned landing pads

Details Method for forming self-aligned landing pads Method for forming self-aligned landing pads

1998-09-03

2000-07-18

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438637, 438672, 438399, H01L 2144

Patent

active

060906952

ABSTRACT:
A method for forming self-aligned landing pads on a substrate containing a pre-formed first conducting layer and a pre-formed first insulator, wherein the substrate further includes a patterned second insulator to form contact openings exposing the substrate. A second conducting layer in formed on the substrate. A photoresist layer is formed on the second conducting layer and patterned to transfer the pattern onto the second conducting layer. The second conducting layer is patterned to expose the first insulator. Then, an etching back process is performed to selectively remove more of the second conducting layer in order to form the self-aligned landing pads.

REFERENCES:
patent: 5387533 (1995-02-01), Kim
patent: 5854127 (1998-12-01), Pan
patent: 6025227 (2000-02-01), Sung et al.
patent: 6037216 (2000-03-01), Liu et al.

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