Method for forming self-aligned contact in semiconductor device

Details Method for forming self-aligned contact in semiconductor device Method for forming self-aligned contact in semiconductor device

2006-08-22

2006-08-22

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S634000, C438S637000, C438S639000, C438S640000, C438S666000, C438S672000, C438S673000, C438S738000

Reexamination Certificate

active

07094672

ABSTRACT:
A method for forming a self-aligned contact on a semiconductor substrate provided with a plurality of field-effect transistors. The method includes the steps of forming a first insulating layer that includes a nitride along a profile of a gate structure and a junction region, forming a temporary layer that has a doped oxide on the first insulting layer, removing a portion of the temporary layer by performing a selective etch of the oxide with a mask while leaving a plug portion of the temporary layer over the junction region, forming a second insulting layer that has an undoped oxide in a region where the portion of the temporary layer is removed, removing the plug portion by performing a selective etch of the undoped oxide to form a contact hole, removing a portion of the first insulating layer at a bottom of the contact hole, and forming a conductive contact ins the contact hole.

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patent: 5902132 (1999-05-01), Mitsuhashi
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patent: 6528418 (2003-03-01), Kim et al.
patent: 6808984 (2004-10-01), Chen
patent: 2004/0203231 (2004-10-01), Hsieh

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