Method for forming self-aligned contact hole

Details Method for forming self-aligned contact hole Method for forming self-aligned contact hole

1999-09-29

2000-11-14

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438639, 438253, 438631, 438626, 438634, 257336, 257344, 257346, 357 15, 357 59, 357 67, H01L 214763

Patent

active

061469971

ABSTRACT:
A simplified method for forming a self-aligned contact hole is disclosed. The method comprises the steps of (a) providing a semiconductor substrate having a gate electrode and a diffusion region thereon; (b) forming a conformal layer of etch barrier material overlying the substrate surface including the diffusion region and the upper surface and the sidewalls of the gate electrode; (c) forming an insulating layer overlying the barrier layer; (d) etching an opening through the insulating layer self-aligned and borderless to the diffusion region by using the barrier layer as an etch stop; and (e) anisotropically etching the barrier layer underneath the opening, thereby exposing the diffusion region and simultaneously forming a spacer of the etch barrier material on the sidewall of the gate electrode.

REFERENCES:
patent: 4675715 (1987-06-01), Lepselter et al.
patent: 5436188 (1995-07-01), Chen
patent: 5545579 (1996-08-01), Liang et al.
patent: 5623153 (1997-04-01), Liang et al.
patent: 5734185 (1998-03-01), Iguchi et al.
patent: 5753547 (1998-05-01), Ying

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