Method for forming roughened surface

Details Method for forming roughened surface Method for forming roughened surface

2011-04-12

2011-04-12

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S782000, C438S795000, C438S508000, C977S742000, C977S773000

Reexamination Certificate

active

07923382

ABSTRACT:
Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.

REFERENCES:
patent: 3405801 (1968-10-01), Zwiacher et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4477296 (1984-10-01), Nair
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5382333 (1995-01-01), Ando et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5731634 (1998-03-01), Matsuo et al.
patent: 5865365 (1999-02-01), Nishikawa et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5939334 (1999-08-01), Nguyen et al.
patent: 6006763 (1999-12-01), Mori et al.
patent: 6033584 (2000-03-01), Ngo et al.
patent: 6066892 (2000-05-01), Ding et al.
patent: 6090666 (2000-07-01), Ueda et al.
patent: 6124189 (2000-09-01), Watanabe et al.
patent: 6130123 (2000-10-01), Liang et al.
patent: 6303500 (2001-10-01), Jiang et al.
patent: 6323131 (2001-11-01), Obeng et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6346151 (2002-02-01), Jiang et al.
patent: 6433432 (2002-08-01), Shimizu
patent: 6444868 (2002-09-01), Vaughn et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 6824816 (2004-11-01), Aaltonen
patent: 6852635 (2005-02-01), Satta et al.
patent: 6921712 (2005-07-01), Soininen et al.
patent: 7105054 (2006-09-01), Lindfors
patent: 7108747 (2006-09-01), Leskela et al.
patent: 7118779 (2006-10-01), Verghese et al.
patent: 7438949 (2008-10-01), Weidman
patent: 7491634 (2009-02-01), Huotari et al.
patent: 7704896 (2010-04-01), Haukka et al.
patent: 2001/0003064 (2001-06-01), Ohto
patent: 2001/0018266 (2001-08-01), Jiang et al.
patent: 2001/0052318 (2001-12-01), Jiang et al.
patent: 2002/0013487 (2002-01-01), Norman et al.
patent: 2002/0027286 (2002-03-01), Sundararajan et al.
patent: 2003/0165615 (2003-09-01), Aaltonen et al.
patent: 2004/0005753 (2004-01-01), Kostamo et al.
patent: 2004/0214354 (2004-10-01), Marsh et al.
patent: 2004/0256662 (2004-12-01), Black et al.
patent: 2005/0048794 (2005-03-01), Brask et al.
patent: 2005/0089632 (2005-04-01), Vehkamaki et al.
patent: 2005/0092247 (2005-05-01), Schmidt et al.
patent: 2005/0271813 (2005-12-01), Kher et al.
patent: 2006/0046384 (2006-03-01), Joo et al.
patent: 2006/0121733 (2006-06-01), Kilpela et al.
patent: 2007/0014919 (2007-01-01), Hamalainen et al.
patent: 2007/0026654 (2007-02-01), Huotari et al.
patent: 2007/0036892 (2007-02-01), Haukka et al.
patent: 2007/0148347 (2007-06-01), Hatanpaa et al.
patent: 41 08 73 (1923-08-01), None
patent: 0469470 (1992-02-01), None
patent: 0511264 (1995-08-01), None
patent: 0880168 (1998-11-01), None
patent: 2 340 508 (2000-02-01), None
patent: WO 93/10652 (1993-05-01), None
patent: WO 00/03420 (2000-01-01), None
Aaltonen et al., “Atomic Layer Deposition of Noble Metal Thin Films,” dissertation presented at the University of Helsinki, Helsinki, Finland, 2005.
Aaltonen et al., “Atomic Layer Deposition of Platinum Thin Films,”Chem. Mater.15:1924-1928 (2003).
Baliga, J., “New Designs and Materials Tackle 1 Gb Memory Challenge,” Semiconductor International, World Wide Web address: semiconductor.net, Nov. 2000.
Basceri, C., “Electrial Dielectric Properties of (Ba,Sr) TiO3Thin Film Capacitors for Ultra-High Density Dynamic Random Access Memories”, Thesis, 1997.
Haukka et al., “Chemisorption of Chromium Acetylacetonate on Porous High Surface Area Silica,”Appl. Surface Science75:220-227 (1994).
Haukka and Root, “The Reaction of Hexamethyldisilazane and Subsequent Oxidation of Trimethylsilyl Groups on Silica Studied by Solid-State NMR and FTIR,”J. Phys. Chem.98:1695-1703 (1994).
Kwon et al., “Ruthenium Bottom Electrode Prepared by Electroplating for a High Density DRAM Capacitor,” J. Electrochem. Soc. 151(2): C127-C132 (2004).
Liu et al., “Metal Nanocrystal Memories—Part I: Device Design and Fabrication,”IEEE Transactions on Electron Devices49(9): 1606-1613 (2002).
Liu et al., “Metal Nanocrystal Memories—Part II: Electrical Characteristics,”IEEE Transactions on Electron Devices49(9): 1614-1622 (2002).
Parsons et al., “Microcontact Patterning of Ruthenium Gate Electrodes by Selective Area,” North Carolina State university, presentation at AVS conference on Atomic Layer Deposition (ALD 2004), Helsinki, Finland, Aug. 16, 2004.
SOI Technology: IBM's Next Advance in Chip Design, 1998.
Ren et al. “Low temperature carbon nanotube growth on Ni-CaF2coated sodalime glass substrate using thermal CVD method” Vacuum Electron Sources Conference (2004), p. 159-162.
Nasibulin et al. “An essential role of CO2and H2O during single-walled CNT synthesis from carbon monoxide” Chemical Physics letters 417 (2006) 179-184.

Affiliated with

Also associated with

Rating

Method for forming roughened surface does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming roughened surface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming roughened surface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2709754