Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-06
2009-02-24
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S107000, C438S108000, C438S652000, C438S668000
Reexamination Certificate
active
07494924
ABSTRACT:
A method for forming reinforced interconnects or bumps on a substrate includes first forming a support structure on the substrate. A substantially filled capsule is then formed around the support structure to form an interconnect. The interconnect can reach a height of up to 300 microns.
REFERENCES:
patent: 4705205 (1987-11-01), Allen et al.
patent: 6252175 (2001-06-01), Khandros
patent: 6281607 (2001-08-01), Petach et al.
patent: 6578754 (2003-06-01), Tung
patent: 2001/0004944 (2001-06-01), Nakamura et al.
patent: 2002/0076971 (2002-06-01), Khoury et al.
patent: 2002/0117330 (2002-08-01), Eldridge et al.
patent: 2003/0234451 (2003-12-01), Razon
patent: 2004/0134974 (2004-07-01), Oh et al.
patent: 2005/0073334 (2005-04-01), Farnworth et al.
patent: 2005/0077624 (2005-04-01), Tan et al.
patent: 2005/0090091 (2005-04-01), Ishikawa et al.
patent: 2005/0110164 (2005-05-01), Pendse
patent: 2005/0133928 (2005-06-01), Howard et al.
patent: 05166811 (1993-07-01), None
Chang Thoon Khin
Chau On Lok
Lai Gor Amie
Shiu Hei Ming
Tan Lan Chu
Au Bac H
Bergere Charles
Freescale Semiconductor Inc.
Smith Zandra
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