Method for forming refractory resistors with etch stop for super

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156646, 156652, 156656, 1566591, 427 38, 427 63, 427102, 427103, 437192, 437246, 505820, B44C 122, C23F 102

Patent

active

050697480

ABSTRACT:
This is a structure of, and method for preparation of, molybdenum resistors in a superconductor integrated circuit. It utilizes a pattern superconductor film; applying a titanium film on the patterned superconductor film; and then applying a molybdenum film on the titanium film to provide a titanium-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film; etching the exposed molybdenum film to expose a portion of the titanium-molybdenum, etch-stop interface; and oxidizing the exposed titanium-molybdenum, etch-stop interface. The titanium-molybdenum etch stop interface protects the patterned superconductor film and the support (including any other underlayers) and increases processing margins for the etch time. Preferably the etching of the exposed molybdenum film is by reactive ion etching and oxidizing the exposed titanium-molybdenum etch stop interface is by exposing the interface to a plasma containing about 25-75 volume percent oxygen and 25-75 volume percent argon, and the titanium film is about 50-500 Angstroms thick.

REFERENCES:
patent: 4439269 (1984-03-01), Cukauskas
patent: 4904619 (1990-02-01), Yamada et al.
patent: 4904980 (1990-02-01), Przybysz et al.
patent: 4913769 (1990-04-01), Kanda et al.
patent: 4981816 (1991-01-01), Kim et al.

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