Method for forming quadruple density sidewall image transfer...

Details Method for forming quadruple density sidewall image transfer... Method for forming quadruple density sidewall image transfer...

2005-04-05

2005-04-05

Everhart, Caridad (Department: 2825)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S694000

Reexamination Certificate

active

06875703

ABSTRACT:
A method is provided for forming a quadruple density sidewall image transfer (SIT) structure. Oxide spacers are formed on opposite sidewalls of a first mandrel. The oxide spacers form a second mandrel. Then sidewall spacers are formed on opposite sidewalls of the oxide spacers forming the second mandrel. A pattern of the sidewall spacers is used to form the quadruple density sidewall image transfer (SIT) structure. The method of the invention enables formation of four well-controlled lines for each lithographically minimum pitch dimension.

REFERENCES:
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6413812 (2002-07-01), Harshfield

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