Method for forming polysilicon plug of semiconductor device

Details Method for forming polysilicon plug of semiconductor device Method for forming polysilicon plug of semiconductor device

2006-10-10

2006-10-10

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C257SE21649

Reexamination Certificate

active

07119015

ABSTRACT:
Disclosed is a method for forming a polysilicon plug of a semiconductor device. The method comprises the steps of: forming a stacked pattern of a wordline and a hard mask film on a semiconductor substrate comprising a cell region and a peripheral circuit region; forming a spacer on a sidewall of the stacked pattern; forming an interlayer insulating film on the semiconductor substrate; polishing the interlayer insulating film via a CMP process using the hard mask film as a polishing barrier film; forming a barrier film on the semiconductor substrate including the interlayer insulating film; selectively etching the barrier film and the interlayer insulating film to form a landing plug contact hole; depositing a polysilicon film filling the landing plug contact hole on the semiconductor substrate; blanket-etching the polysilicon film using the barrier film as an etching barrier film; and polishing the polysilicon film and the barrier film using the hard mask film as a polishing barrier film to form a polysilicon plug.

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