Method for forming polysilicon germanium layer

Details Method for forming polysilicon germanium layer Method for forming polysilicon germanium layer

2005-08-02

2005-08-02

Baumeister, B. William (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S286000, C438S222000, C438S585000, C438S197000, C438S296000, C438S509000

Reexamination Certificate

active

06924219

ABSTRACT:
A method for forming a polysilicon germanium layer on a gate oxide layer without forming a polysilicon seed layer previously is disclosed. The method uses a chemical vapor deposition process at a temperature range between about 500° C. to about 600° C. by using a Si2H6(disilane) gas and a germanium-containing gas as precursors to form a polysilicon germanium layer on a gate dielectric layer as a gate electrode layer. The polysilicon germanium layer directly formed on the gate dielectric layer has a smooth surface.

REFERENCES:
patent: 2002/0173130 (2002-11-01), Pomerede et al.

Affiliated with

Also associated with

Rating

Method for forming polysilicon germanium layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming polysilicon germanium layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming polysilicon germanium layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3509953