Method for forming polycrystalline thin film bipolar...

Details Method for forming polycrystalline thin film bipolar... Method for forming polycrystalline thin film bipolar...

2007-06-15

2010-12-21

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Radiation or energy treatment modifying properties of...

C257SE21372, C257SE27053, C257S565000

Reexamination Certificate

active

07855119

ABSTRACT:
A method is described for forming a semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide. The emitter region and collector region also may be formed from polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49phase titanium silicide.

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