Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-12-27
1998-06-16
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438487, 438308, 148DIG90, 117 8, 117904, H01L 21268
Patent
active
057669899
ABSTRACT:
A method for forming a polycrystalline semiconductor thin film according to the present invention includes the steps of: forming a semiconductor thin film partially containing microcrystals serving as crystal nuclei for polycrystallization on an insulating substrate; and polycrystallizing the semiconductor thin film by laser annealing.
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I. Asai et al., "A Fabrication of Homogeneous Poly-Si TFT's Using Excimer Laser Annealing", Abstracts of the 1992 International Conference on Solid State Devices and Materials, pp. 55-57, 1992.
H. Kuriyama et al., "High Mobility Poly-Si TFT By A New Excimer Laser Annealing Method for Large Area Electronics", IEDM 91, pp. 563-566, 1991.
S. Noguchi et al., "Enlargement of P-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance P-Si TFT", Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, pp. 623-625, 1991.
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Furuta Mamoru
Kawamura Tetsuya
Maegawa Shigeki
Miyata Yutaka
Tsutsu Hiroshi
Bowers Jr. Charles L.
Matsushita Electric - Industrial Co., Ltd.
Radomsky Leon
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