Method for forming polycrystalline silicon thin film transistor

Details Method for forming polycrystalline silicon thin film transistor Method for forming polycrystalline silicon thin film transistor

2006-04-11

2006-04-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

Reexamination Certificate

active

07026201

ABSTRACT:
A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

REFERENCES:
patent: 6506669 (2003-01-01), Kuramasu et al.
patent: 6858512 (2005-02-01), Morimoto et al.
patent: 2004/0248345 (2004-12-01), Chang
patent: 2005/0032338 (2005-02-01), Chen

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