Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Patent
1997-03-07
1998-10-27
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
438150, H01L 3102
Patent
active
058277730
ABSTRACT:
A method is provided of fabricating a thin film transistor semiconductor film of polycrystalline silicon on a transparent substrate suitable for the manufacture of a liquid crystal display. A film of substantially amorphous silicon is placed on the transparent substrate. Suspended in the amorphous silicon are small silicon seed crystals. As the amorphous silicon is annealed, crystal grains, begun from the seed crystals, are formed in the resulting polycrystalline silicon. The seed crystals help regulate the annealment process, and reduce process dependence on precision deposition and heating methods. The use of seed crystals also helps ensure that crystal grains are both large and consistent in size. Large grains promote to production of TFTs with high electron mobility and uniform performance across the entire LCD.
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Bowers Jr. Charles L.
Christianson Keith
Maliszewski Gerald
Ripma David C.
Sharp Kabushiki Kaisha
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