Coating processes – Direct application of electrical – magnetic – wave – or... – Pretreatment of substrate or post-treatment of coated substrate
Reexamination Certificate
2007-04-17
2007-04-17
Meeks, Timothy (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Pretreatment of substrate or post-treatment of coated substrate
C427S532000, C427S553000, C427S554000, C427S272000, C118S720000, C118S721000, C438S795000, C438S796000, C257S351000
Reexamination Certificate
active
10934826
ABSTRACT:
Disclosed is a method for forming a polycrystalline silicon film of a polycrystalline silicon thin film transistor. The method includes a step of crystallizing an amorphous silicon film deposited on a glass substrate by irradiating a laser beam onto the amorphous silicon film using a mask pattern. The glass substrate is horizontally moved by a predetermined distance unit corresponding to a translation distance of the mask pattern when the laser beam is irradiated onto the amorphous silicon film through a mask having the mask pattern, thereby growing grains in a circular shape.
REFERENCES:
patent: 6117752 (2000-09-01), Suzuki
patent: 6555449 (2003-04-01), Im et al.
patent: 2004/0084679 (2004-05-01), Nakayama
patent: 2000 0001170 (2000-01-01), None
patent: 2002 0091896 (2002-12-01), None
Kim Eok Su
Kwon Se Yeoul
Lee Ho Nyeon
Lee Jun Ho
Park Jae Chul
Boe Hydis Technology Co., Ltd.
Ladas & Parry LLP
Meeks Timothy
Sellman Cachet I
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